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| ON Semiconductor ) PNP Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage - @ 100 mAdc - VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043 = 100 Vdc (Min) - 2N6042, 2N6045 * Low Collector-Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045 * Monolithic Construction with Built-In Base-Emitter Shunt Resistors MAXIMUM RATINGS (1) Rating 2N6040 2N6043 60 60 2N6040 2N6042 2N6043 * NPN 2N6045* *ON Semiconductor Preferred Device DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 75 WATTS PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II I I II II I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIII III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I I IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB PD 2N6042 2N6045 100 100 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 8.0 16 Collector Current - Continuous Peak Base Current 120 mAdc Watts W/_C _C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range Characteristic 75 0.60 TJ, Tstg -65 to +150 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 THERMAL CHARACTERISTICS Symbol JC JA Max 57 Unit CASE 221A-09 TO-220AB Thermal Resistance, Junction to Case 1.67 _C/W _C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 4 Publication Order Number: 2N6040/D 2N6040 2N6042 2N6043 2N6045 t, TIME ( s) II III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Vdc 2N6040, 2N6043 60 100 - - 2N6042, 2N6045 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) ICEO A 2N6040, 2N6043 2N6042, 2N6045 - - - - - - - - - - 20 20 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICEX A 2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 20 20 200 200 200 20 20 ICBO A 2N6040, 2N6043 (VCB = 100 Vdc, IE = 0) 2N6042, 2N6045 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) IEBO hFE 2.0 mAdc ON CHARACTERISTICS - 2N6040, 2N6043, 2N6042, 2N6045 All Types 1000 1000 100 - - - - - 20.000 20,000 - 2.0 2.0 4.0 4.5 2.8 Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) VCE(sat) Vdc 2N6040, 2N6043, 2N6042, 2N6045 All Types Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(sat) VBE(on) |hfe| Cob hfe Vdc Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 4.0 - - - 2N6040/2N6042 2N6043/2N6045 300 200 - pF - Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. 300 5.0 2.0 1.0 CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA V2 approx +8.0 V 0 V1 approx -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 TUT RB D1 +4.0 V 25 s for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. V 3.0 ts tf 0.7 0.5 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25C PNP 0.07 td @ VBE(off) = 0 V NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) tr 8.0 k 120 5.0 7.0 10 Figure 2. Switching Times Equivalent Circuit Figure 3. Switching Times http://onsemi.com 2 2N6040 2N6042 2N6043 2N6045 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.05 0.02 SINGLE PULSE 0.01 D = 0.5 0.2 0.1 P(pk) JC(t) = r(t) JC JC = 1.67C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 20 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 500 s 1.0 ms dc 5.0 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 20 30 5.0 7.0 10 2.0 3.0 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 s 0.5 0.2 0.1 0.05 0.02 1.0 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active-Region Safe Operating Area 10,000 hfe, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 50 30 0.1 Cib PNP NPN 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Small-Signal Current Gain Figure 7. Capacitance http://onsemi.com 3 2N6040 2N6042 2N6043 2N6045 PNP 2N6040, 2N6042 20,000 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 TJ = 150C 25C VCE = 4.0 V 20,000 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 -55C TJ = 150C VCE = 4.0 V NPN 2N6043, 2N6045 -55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 2.6 IC = 2.0 A 2.2 1.8 1.4 1.0 0.3 4.0 A 6.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 1.8 1.4 1.0 0.3 4.0 A 6.0 A 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2.0 1.5 1.0 0.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) 3.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages http://onsemi.com 4 2N6040 2N6042 2N6043 2N6045 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 5 2N6040 2N6042 2N6043 2N6045 Notes http://onsemi.com 6 2N6040 2N6042 2N6043 2N6045 Notes http://onsemi.com 7 2N6040 2N6042 2N6043 2N6045 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6040/D |
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